@article{c128f8115f2b4207810d9e651e52ac14,
title = "Enhanced Ionic Sensitivity in Solution-Gated Graphene-Hexagonal Boron Nitride Heterostructure Field-Effect Transistors",
keywords = "hexagonal boron nitride (hBN), ion sensing, solution-gated graphene ion sensitive field-effect transistor (ISFET)",
author = "Nowzesh Hasan and Bo Hou and Moore, \{Arden L.\} and Radadia, \{Adarsh D.\}",
note = "Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",
year = "2018",
month = aug,
doi = "10.1002/admt.201800133",
language = "English",
volume = "3",
journal = "Advanced Materials Technologies",
issn = "2365-709X",
number = "8",
}