FET Fabricated by Layer-by-Layer Nanoassembly

Tianhong Cui; Feng Hua; Yuri Lvov

doi:10.1109/TED.2003.822277

FET Fabricated by Layer-by-Layer Nanoassembly

Tianhong Cui
, Feng Hua
, Yuri Lvov

University of Minnesota
Institute for Micromanufacturing

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	503-506
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	3
DOIs	https://doi.org/10.1109/TED.2003.822277
State	Published - Mar 2004
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Field-effect transistor (FET)
Lithography
Nano self-assembly
Nanoparticle

Access to Document

10.1109/TED.2003.822277

Cite this

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title = "FET Fabricated by Layer-by-Layer Nanoassembly",

keywords = "Field-effect transistor (FET), Lithography, Nano self-assembly, Nanoparticle",

author = "Tianhong Cui and Feng Hua and Yuri Lvov",

year = "2004",

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language = "English",

volume = "51",

pages = "503--506",

journal = "IEEE Transactions on Electron Devices",

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AU - Cui, Tianhong

AU - Hua, Feng

AU - Lvov, Yuri

PY - 2004/3

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KW - Field-effect transistor (FET)

KW - Lithography

KW - Nano self-assembly

KW - Nanoparticle

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DO - 10.1109/TED.2003.822277

M3 - Article

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VL - 51

SP - 503

EP - 506

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -

FET Fabricated by Layer-by-Layer Nanoassembly

UN SDGs

ASJC Scopus Subject Areas

Keywords

Access to Document

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